| Autor: |
RADANTSEV, V. F., KRUZHAEV, V. V. |
| Předmět: |
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| Zdroj: |
International Journal of Nanoscience; Jun2007, Vol. 6 Issue 3/4, p301-304, 4p |
| Abstrakt: |
The Rashba effect peculiarities in gated accumulation layers on the zero-gap HgCdTe are studied theoretically and experimentally. It is shown that the kinetic binding is strongly affected by spin–orbit interaction. Although the spin–orbit splitting is smaller in accumulation layers as compared with inversion ones, the "Rashba polarization", Δn/n, can achieve 100% in the kinetic confinement regime. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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