| Autor: |
Gorbatyuk, A. V., Grekhov, I. V. |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; May2008, Vol. 34 Issue 5, p435-438, 4p, 2 Graphs |
| Abstrakt: |
The operation of modern high-power bipolar switches has been analyzed to estimate the influence of the magnitude and distribution of an excess charge, which has to be extracted upon turn-off, on the integral dynamic losses. It is shown that these losses can be significantly reduced by properly matching the structural parameters and selecting the gate regime. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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