| Autor: |
Lin, Hao-Peng, Hwu, Jenn-Gwo |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; May2008, Vol. 103 Issue 10, p104102, 5p, 1 Chart, 9 Graphs |
| Abstrakt: |
This work studies the effects of high electric field stress and thermal stress, separately or simultaneously, on the gate injection current of metal-oxide-semiconductor (MOS) capacitors with ultrathin SiO2 (2.5 nm). After applying either Fowler–Nordheim stress (FNS) or thermal stress (TS), a slight increase in gate injection current of MOS(P) is occasionally observed. However, a more abrupt increase in gate injection current with higher occurrence probability is measured if both FNS and TS (FNTS) are applied together. Some percolation path might be formed among the oxide defects and cause the abrupt current rise. Interestingly, it is found that the soft breakdown time of FNTS devices is prolonged after being treated with subsequent de-ionized (DI) water immersion. Furthermore, the gate current density is recovered due to DI water immersion treatment. A shallow trap level of 0.168 eV in SiO2 for FNTS devices is extracted according to Poole–Frenkel conduction model analysis. This shallow trap level induced by FNTS may vanish after water immersion. It is supposed that these shallow traps are responsible for the occurrence of the abrupt increase in gate current observed in FNTS devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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