| Autor: |
De-Cheng Hsu, Ingram Yin-ku Chang, Ming-Tsong Wang, Pi-Chun Juan, Y. L. Wang, Joseph Ya-min Lee |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/19/2008, Vol. 92 Issue 20, p202901, 3p, 3 Graphs |
| Abstrakt: |
The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric was studied. It was observed that the degradation in threshold voltage (ΔVT) has an exponential dependence on the stress time in the temperature range from 25 to 75 °C. The measurement of subthreshold slope (ΔS) during stress indicates that the degradation in VT is due to the interface trap charges Qit. The extracted activation energy of 0.3–0.5 eV is related to a degradation dominated by the release of atomic hydrogen in the Si–ZrO2 interface. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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