Photoluminescence in delta-doped InGaAs/GaAs single quantum wells.

Autor: Dao, L.V., Gal, M.
Předmět:
Zdroj: Journal of Applied Physics; 4/15/2000, Vol. 87 Issue 8, p3896, 4p, 1 Chart, 3 Graphs
Abstrakt: Presents information on a study which examined the time integrated and time resolved photoluminescence spectra of silicon delta-doped indium gallium arsenic/gallium arsenic quantum wells. Methodology of the study; Results and discussion on the study.
Databáze: Complementary Index