Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition.
| Autor: | Chichibu, S., Arita, M., Nakanishi, H., Nishio, J., Sugiura, L., Kokubun, Y., Itaya, K. |
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| Zdroj: | Journal of Applied Physics; 3/1/1998, Vol. 83 Issue 5, p2860, 3p, 3 Graphs |
| Abstrakt: | Examines the band-gap separation in InGaN epilayers through the metalorganic chemical vapor deposition. Indication of the observations of the single photoluminescence (PL) peak; Information on the results which were obtained. |
| Databáze: | Complementary Index |
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