| Autor: |
Fonthal, F., Trifonov, T., Rodríguez, A., Goyes, C., Marsal, L. F., Ferré-Borrull, J., Pallarés, J. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 4/15/2008, Vol. 992 Issue 1, p780-785, 6p, 1 Diagram, 5 Graphs |
| Abstrakt: |
The photoelectrical properties of porous silicon (PS) layers on p-type silicon were studied using two structures Au/PS/p-Si/Al (photodiode) and Au/PS/Au (photoconductor) with two different low porosity PS layer thicknesses each one. The electrical characteristics of the four fabricated devices were compared under three different light sources: a cold white lamp with an IR filter, a 465 nm blue LED and a 945 nm IR LED. Our results show a linear dependence between the measured photocurrent and the illumination power for all light sources and all studied devices. The limiting transport mechanisms in the Au/PS contact and in the PS/p-Si junction were obtained by comparing the performance of the devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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