| Autor: |
Ahmed, S. A., Diab, A. K., Abdel Hakeem, A. M. |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 4/7/2008, Vol. 92 Issue 14, p142107, 3p, 1 Chart, 3 Graphs |
| Abstrakt: |
I–V measurements and temperature dependence of electrical conductivity on polycrystalline samples of Bi2Se3 and SnBi4Se7 have been performed. From the analysis of the temperature dependence of electron concentration in the activation regime above room temperature, the effective mass me* has been determined. Some intrinsic and contact properties such as barrier heights, ideality factors, and carrier concentrations have been investigated by using I–V characteristics. It has been found that all samples exhibit Ohmic and space charge limited conduction at low and high fields, respectively. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
