| Autor: |
Goldstein, R. V., Ustinov, K. B., Shushpannikov, P. S., Mezhennyi, M. V., Mil'vidskiĭ, M. G., Reznik, V. Ya. |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; Feb2008, Vol. 34 Issue 2, p106-108, 3p, 1 Diagram |
| Abstrakt: |
A new method is proposed for evaluation of the intrinsic deformations of precipitates in silicon based on an analysis of the precipitate-dislocation arrays that appear at the late stages of multistep thermal treatment of silicon wafers. The estimate can be used for determining the fraction of a matrix substance present in the precipitate. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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