| Autor: |
Uhrmann, T., Dimopoulos, T., Brückl, H., Lazarov, V. K., Kohn, A., Paschen, U., Weyers, S., Bär, L., Rührig, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Mar2008, Vol. 103 Issue 6, p063709, 5p, 1 Diagram, 1 Chart, 3 Graphs |
| Abstrakt: |
In this work we present the structural and electrical characterization of sputter-deposited CoFe(B)/MgO/Si metal-insulator-semiconductor tunneling junctions for injection and detection of spin polarized current in silicon. The multilayers have been deposited in 700 nm deep trenches, patterned in thick SiO2 dielectric, on n- and p-doped wafers. The films inside the trenches are continuous with a correlated and low roughness. The MgO barrier grows amorphous without indication of pinholes. The dc and ac transport properties of the junctions were studied as a function of temperature and frequency. A relatively high interface trap density at the MgO/Si-interface is extracted from admittance spectra measurements. Transport is dominated by majority carriers in the case of n-doped and by minority carriers for the p-doped wafers. This leads to distinct rectification characteristics for the two wafer types, which would significantly influence the spin injection efficiency of the tunneling junctions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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