| Autor: |
Sung-Wook Nam, Cheolkyu Kim, Min-Ho Kwon, Hyo-Sung Lee, Jung-Sub Wi, Dongbok Lee, Tae-Yon Lee, Yoonho Khang, Ki-Bum Kim |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 3/17/2008, Vol. 92 Issue 11, p111913, 3p, 3 Diagrams, 1 Graph |
| Abstrakt: |
We report the breakdown behavior of a patterned Ge2Sb2Te5 multiline structure during the voltage-driven electric stress biasing. Scanning Auger microscope analysis shows that the breakdown process accompanies with a phase separation of Ge2Sb2Te5 into an Sb, Te-rich phase and a Ge-rich phase. The phase separation is explained by the incongruent melting of Ge2Sb2Te5 based on the pseudobinary phase diagram between Sb2Te3 and GeTe. It is claimed that this phase separation behavior by incongruent melting provides one of the plausible mechanisms of the device failure in a phase change memory. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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