| Autor: |
Tsen, G. K. O., Musca, C. A., Dell, J. M., Antoszewski, J., Faraone, L., Becker, C. R. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/25/2008, Vol. 92 Issue 8, p082107, 3p, 1 Diagram, 4 Graphs |
| Abstrakt: |
Arsenic incorporation in HgTe/Hg0.05Cd0.95Te superlattices grown by molecular beam epitaxy (MBE) is reported. The incorporation was carried out by a δ-doping approach where arsenic was incorporated during MBE growth as acceptors. The superlattices were characterized via high resolution x-ray diffraction, Fourier transform infrared spectroscopy, secondary ion mass spectrometry, and magnetotransport Hall measurements coupled with the quantitative mobility spectrum analysis algorithm. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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