An Electrical Method for Measuring the Difference in Bandgap across the Neutral Base in SiGe HBT's.

Autor: Tang, Yue Teng, Hamel, John S.
Předmět:
Zdroj: IEEE Transactions on Electron Devices; Apr2000, Vol. 47 Issue 4, p797, 8p, 2 Black and White Photographs, 1 Diagram, 10 Graphs
Abstrakt: Presents information on a study which described an electrical method for measuring the bandgap difference across the neutral base of SiGe heterojunction bipolar transistors. Theory; Experimental and numerical results; Conclusion.
Databáze: Complementary Index