| Autor: |
V. Zaletin, Yu. Tuzov, V. Dvoryankin, A. Sokolovskii |
| Předmět: |
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| Zdroj: |
Atomic Energy; Nov2007, Vol. 103 Issue 5, p901-905, 5p |
| Abstrakt: |
Abstract The results of investigations of semiconductor detectors on the basis of epitaxial layers of gallium arsenide for detecting x rays and low-energy radiation are examined. It is shown that epitaxial layers ranging in thickness from 60 to 300 µm with current carrier density ≤5·1013 cm−3 and electron mobility ≥6000 cm2/(V·sec) at 300 K hold promise for such detectors. A new type of photovoltaic x-ray detector based on the epitaxial structures p+-n-ni-n+ GaAs is described. Such detectors possess high charge collection efficiency with zero bias at room temperature and can operate in two regimes — counting and current integration — and will substantially expand the dynamical range of image formation when used in scanning systems. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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