| Autor: |
Patriarche, G., Jeannés, F., Oudar, J.-L., Glas, F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/15/1997, Vol. 82 Issue 10, p4892, 6p, 8 Black and White Photographs, 5 Diagrams, 2 Charts, 1 Graph |
| Abstrakt: |
Investigates the structure of a well-bonded interface between two misfitting crystals and the process governing its formation. High reflectivity AlGaAs Bragg reflectors with an InP-based active material; Optimization of the GaAs/AnP bonding process; Development of a technique involving the fabrication of strongly mismatched structures by direct wafer bonding. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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