| Autor: |
Shiqiang Wei, Oyanagi, Hiroyuki, Kawanami, Hitoshi, Sakamoto, Kunihiro, Sakamoto, Tsunenori, Tamura, Kazuhisa, Saini, Naurang L., Uosaki, Kohei |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/15/1997, Vol. 82 Issue 10, p4810, 5p, 1 Diagram, 1 Chart, 7 Graphs |
| Abstrakt: |
Studies the local structures of dilute isovalent and heterovalent impurity atoms in silicon crystals. Use of fluorescence x-ray absorption fine structure; Evaluation of the distortion of local lattice around the impurity atoms; Strong effect of the Coulomb interactions between the localized charge; Absence of anomaly in case of negatively charged Ga atoms. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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