Determination of diffusion coefficients in degenerate electron gas using Monte Carlo simulation.
| Autor: | Thobel, J.L., Sleiman, A., Fauquembergue, R. |
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| Zdroj: | Journal of Applied Physics; 8/1/1997, Vol. 82 Issue 3, p1220, 7p, 7 Graphs |
| Abstrakt: | Proposes a method for the determination of diffusion coefficients in degenerate semiconductors from an ensemble Monte Carlo (MC) simulation. Equation of evolution for the distribution of excess carriers; Principle of ensemble MC method; Application of MC method to doped quantum well. |
| Databáze: | Complementary Index |
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