| Autor: |
Law, J. J. M., Yu, E. T., Haskell, B. A., Fini, P. T., Nakamura, S., Speck, J. S., DenBaars, S. P. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Jan2008, Vol. 103 Issue 1, p014305, 5p, 3 Diagrams, 1 Graph |
| Abstrakt: |
Scanning capacitance microscopy is used to characterize nanoscale, local electronic structure in nonpolar n-type GaN grown in the a-plane orientation using lateral epitaxial overgrowth (LEO). Analysis of the bias dependence of the scanning capacitance image contrast observed reveals the presence of a linear, positively charged feature aligned along the [1100] direction, extending from an LEO window region into the adjacent wing region and terminating a few microns into the wing region. Comparison of the scanning capacitance images with cathodoluminescence and transmission electron microscopy data, revealing the presence of line defects aligned along the [1100] direction that emerge from the window regions, indicates that this positively charged feature likely corresponds to a partial dislocation at the edge of a stacking fault. The observation of positive dislocation charge is striking in that studies of GaN grown in the polar c-plane orientation have predominantly revealed the presence only of negatively charged or electrically neutral dislocations. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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