| Autor: |
Jobson, K. W., Wells, J.-P. R., Schropp, R. E. I., Vinh, N. Q., Dijkhuis, J. I. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; Jan2008, Vol. 103 Issue 1, p013106, 5p, 1 Diagram, 4 Graphs |
| Abstrakt: |
We report on picosecond, time-resolved measurements of the vibrational relaxation and decay pathways of the Si–H and Ge–H stretching modes in hydrogenated amorphous silicon-germanium thin films (a-SiGe:H). It is demonstrated that the decay of both modes has a nonexponential shape, attributable to the local environment of the Si–H and Ge–H bonds. Temperature dependent measurements of the ensemble averaged population decay time 1> are used to demonstrate that the stretch modes relax to Si(Ge)-H bending modes and that the excess energy is dissipated into a combination of bulk vibrations. The influence of the mixed character Si-Ge bulk vibrations upon the relaxation dynamics is discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
