Autor: |
Tang, Henry H. K., Murray, Conal E., Fiorenza, Giovanni, Rodbell, Kenneth P., Gordon, Michael S. |
Předmět: |
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Zdroj: |
IEEE Transactions on Nuclear Science; Dec2007 Part 1 of 2, Vol. 54 Issue 6, p2162-2167, 6p, 1 Black and White Photograph, 7 Graphs |
Abstrakt: |
Novel techniques have been developed to simulate particle transport in arbitrarily complex back-end-of-line topologies. They are shown to be critical for single event effect analyses of new device structures for 65 nm CMOS technologies and beyond. The salient features of the new modeling methods are illustrated by the simulation results taken from several case studies of particle-induced radiation problems in the back end. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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