Autor: |
Krug, Dietmar, Bernet, Steffen, Fazel, Seyed Saeed, Jalili, Kamran, Malinowski, Mariusz |
Předmět: |
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Zdroj: |
IEEE Transactions on Industrial Electronics; Dec2007, Vol. 54 Issue 6, p2979-2992, 14p, 5 Black and White Photographs, 4 Diagrams, 9 Charts, 15 Graphs |
Abstrakt: |
This paper compares the expense of power semiconductors and passive components of a (2.3 kV, 2.4 MVA) two-level, three-level neutral-point-clamped, three-level flying-capacitor, four-level flying-capacitor, and five-level series- connected H-bridge voltage source converter on the basis of the state-of-the-art 6.5-, 3.3-, 2.5-, and 1.7-kV insulated gate bipolar transistors for industrial medium-voltage drives. The power semiconductor losses, the loss distribution, the installed switch power, the design of flying capacitors, and the components of an LC sine filter for retrofit applications are considered. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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