| Autor: |
Lianjun Liu, Shun-Meen Kuo, Abrokwah, Jon, Ray, Marcus, Maurer, David, Miller, Mel |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Components & Packaging Technologies; Dec2007, Vol. 30 Issue 4, p556-562, 7p, 4 Black and White Photographs, 1 Diagram, 8 Graphs |
| Abstrakt: |
An integrated passive device (IPD) technology has been developed to meet the ever increasing needs of size and cost reduction in radio front-end transceiver module applications. Electromagnetic (EM) simulation was used extensively in the design of the process technology and the optimization of inductor and harmonic filter designs and layouts. Parameters such as inductor shape, inner diameter, metal thickness, metal width, and substrate thickness have been optimized to provide inductors with high quality factors. The technology includes 1) a thick plated gold metal process to reduce resistive loss; 2) MIM capacitors using PECVD Si3N4 dielectric layer; 3) airbridges for inductor underpass and capacitor pick-up; and 4) a 10 mil finished GaAs substrate to improve inductor quality factor. Both lumped element circuit simulations and electromagnetic (EM) simulations have been used in the harmonic filter circuit designs for high accuracy and fast design cycle time. This paper will present the EM simulation calibration and demonstrate the importance of using EM simulation in the filter design in order to achieve first-time success in wafer fabrication. The fabricated IPD devices have insertion loss of <0.5 dB and harmonic rejections of >30 dB with die size of 1.42 mm2 for high band (1710 MHz-1910 MHz) and 1.89 mm2 for low band (824-915 MHz) harmonic filters. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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