| Autor: |
Jun-Ku Ahn, Hae-Won Kim, Kyung-Chan Ahn, Soon-Gil Yoon, Seung-Hyun Son, Hyung-Mi Jung, Jin-Suck Moon, Hyun-Joo Jin, Seung-Eun Lee, Jeong-Won Lee, Yeoul-Kyo Chung, Yong-Soo Oh |
| Předmět: |
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| Zdroj: |
Integrated Ferroelectrics; 2007, Vol. 95 Issue 1, p187-195, 9p, 1 Chart, 6 Graphs |
| Abstrakt: |
B2Mg2/3Nb4/3O7 (BMN) thin films were deposited at low temperature (< 200°C) on Copper Clad Laminates (CCL) with various Ar/O2 flow ratios and film thicknesses by sputtering system. 200 nm-thick BMN thin films were deposited at Ar/O2 = 10: 10 had rms roughness of 54.3 ÅA, capacitance density of 155 nF/cm2 at 100 kHz, dissipation factor of 0.017 and leakage current density of ∼10- 5 at 3 V. Surface roughness of the BMN thin films increased a little with increasing the film thickness. However leakage current density decreased and the dielectric constant of that was maintained at 40. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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