Development of Molecular Beam Epitaxially Grown Hg1-xCdxTe for High-Density Vertically-Integrated Photodiode-Based Focal Plane Arrays.

Autor: Aqariden, F., Dreiske, P. D., Kinch, M. A., Liao, P. K., Murphy, T., Schaake, H. F., Shafer, T. A., Shih, H. D., Teherani, T. H.
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Zdroj: Journal of Electronic Materials; Aug2007, Vol. 36 Issue 8, p900-904, 5p, 2 Color Photographs, 5 Diagrams, 1 Chart, 2 Graphs
Abstrakt: Hg1-xCdxTe samples of x ~ 0.3 (in the midwave infrared, or MWIR, spectral band) were prepared by molecular beam epitaxy (MBE) for fabrication into 30-µm-pitch, 256 x 256, front-side-illuminated, high-density vertically-integrated photodiode (HDVIP) focal plane arrays (FPAs). These MBE Hg1-xCdxTe samples were grown on CdZnTe(211) substrates prepared in this laboratory; they were ~10-µm thick and were doped with indium to ~5 x 1014 cm-3. Standard HDVIP process flow was employed for array fabrication. Excellent array performance data were obtained from these MWIR arrays with MBE HgCdTe material. The noise-equivalent differential flux (NEΔΦ) operability of the best array is 99.76%, comparable to the best array obtained from liquid-phase epitaxy (LPE) material prepared in this laboratory. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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