| Autor: |
Dhalluin, Florian, Desré, Pierre J., den Hertog, Martien I., Rouvière, Jean-Luc, Ferret, Pierre, Gentile, Pascal, Baron, Thierry |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Nov2007, Vol. 102 Issue 9, p094906, 5p, 1 Diagram, 4 Graphs |
| Abstrakt: |
The existence of a critical radius on the growth of Si nanowires by the vapor-liquid-solid mechanism is examined. By varying the experimental growth parameters, we have shown a dependence of the minimum nanowires radius with the Si reactive species partial pressure, demonstrating that the critical radius is not a limited one. A thermodynamical model giving a quantitative aspect of the dependence of a critical nanowire diameter on Si supersaturation in a Au-Si droplet is proposed. These results open up a way to grow many kinds of nanowires with nanometric diameter. The size control has important implications for electronic and optical properties of nanowires based devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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