| Autor: |
Jhong-Sheng Wang, William Po-Nien Chen, Chun-Hsing Shih, Chenhsin Lien, Pin Su, Yi-Ming Sheu, Donald Yuan-Shun Chao, Ken-Ichi Goto |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Nov2007, Vol. 28 Issue 11, p1040-1043, 4p |
| Abstrakt: |
A new mobility model, together with its extraction method for manufacturing strained-Si MOSFETs, is presented. An accurate mobility extraction is obtained from the linear drain current by excluding the parasitic source/drain resistance and the parasitic gate capacitance. In addition to universal curves, the Coulomb mobility is dependent on whether devices have compressive or tensile stress. The dependences of Coulomb scattering on different stress conditions can be decoupled from the effective channel mobility in Matthiessen's form. From the extracted results, the tensile-stress N-channel MOSFETs have less Coulomb scattering effect, while the compressive counterparts suffer the worse Coulomb mobility degradation. By including the Coulomb scattering corrections, our model can properly predict mobility enhancements for various strained-Si technologies and dimensions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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