| Autor: |
Chun-Chien Tsai, Kai-Fang Wei, Yao-Jen Lee, Hsu-Hsin Chen, Jyh-Liang Wang, I-Che Lee, Huang-Chung Cheng |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Nov2007, Vol. 28 Issue 11, p1010-1013, 4p |
| Abstrakt: |
In this letter, high-performance low-temperature polysilicon thin-film transistors (TFTs) with double-gate (DG) structure and controlled lateral grain growth have been demonstrated by excimer laser crystallization. Via a proper excimer laser condition, along with the a-Si step height beside the bottom gate, a superlateral growth of Si was formed in the channel length plateau. Therefore, the DG TFTs with lateral silicon grains in the channel regions exhibited better current-voltage characteristics, as compared with the conventional top-gate ones. The proposed DG TFTs (W/L = 1/1 μm) had the field-effect mobility exceeding 550 cm²/V · s, an ON/OFF current ratio that is higher than 108, superior short-channel characteristics, and higher current drivability. In addition, the device-to-device uniformity could be improved since grain growth could be artificially controlled by the spatial plateau structure. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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