| Autor: |
Zschech, Ehrenfried, Potapov, Pavel, Chumakov, Dmytro, Engelmann, Hans-Juergen, Geisler, Holm, Sukharev, Valeriy |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 10/31/2007, Vol. 945 Issue 1, p142-151, 10p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Plasma processes for resist stripping, via etching and post-etch cleaning remove C and H containing molecular groups from the near-surface layer of organosilicate glass (OSG). Particularly, composition and chemical bonding of low-k materials are changed. In this paper, the effect of chemical bonding on permittivity and elastic modulus is studied. Compositional analysis and chemical bonding characterization of structured ILD films with nanometer resolution is done with electron energy loss spectroscopy (EELS). The fine structure near the C-K electron energy loss edge allows to differentiate between C-H, C-C, and C-O bonds, and consequently, between individual low-k materials and their modifications. Dielectric permittivity changes are studied based on VEELS (valence EELS) measurements and subsequent Kramers-Kronig analysis. The elastic modulus is determined with atomic force microscopy (AFM) in force modulation (FM) mode. Nanoindentation was applied as a complementary technique to obtain reference data. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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