| Autor: |
Viswanath, A. Kasi, Shin, Eun-joo, Joo In Lee, Sungkyu Yu, Dongho Kim, Baeyong Kim, Yoonho Choi, Chang-Hee Hong |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/1998, Vol. 83 Issue 4, p2272, 4p, 1 Chart, 6 Graphs |
| Abstrakt: |
Provides information on an experiment studying the magnesium doped acceptor levels in GaN epitaxial layers grown by metal-organic chemical vapor deposition on sapphire substrate using photoluminescence. Methodology used to conduct the experiment; Results of the experiment. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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