| Autor: |
Zhu, Y. Y., Fang, Z. B., Chen, S., Liao, C., Wu, Y. Q., Fan, Y. L., Jiang, Z. M. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/17/2007, Vol. 91 Issue 12, p122914, 3p, 2 Diagrams, 2 Graphs |
| Abstrakt: |
Fowler-Nordheim (FN) tunneling of holes in metal-Er2O3–Si structures is confirmed. The effective mass of holes in Er2O3 films is estimated ranging from 0.068m to 0.092m, where m is the free electron mass. The film shows a high breakdown electric field of about 70 MV/cm for an Er2O3 film thickness of 8.5 nm, implying that the film which is epitaxially grown on Si substrate has smooth interface and surface. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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