| Autor: |
Magee, C. W., Hockett, R. S., Büyüklimanli, T. H., Abdelrehim, I., Marino, J. W. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 9/26/2007, Vol. 931 Issue 1, p142-145, 4p, 5 Graphs |
| Abstrakt: |
Comparisons with SIMS analyses with nuclear techniques such as elastic recoil detection (ERD), nuclear reaction analysis (NRA), and high-resolution Rutherford backscattering spectrometry (HR-RBS), have shown that SIMS analyses without fully oxidizing the analytical area agree well with these techniques at sufficiently high concentrations (where the nuclear techniques are applicable). The ability to measure both the B profile and an oxide marker with this non-oxidizing SIMS technique also allows accurate positioning of the B profile with respect to the SiO2/Si interface. This SIMS analysis protocol has been used to study the differences in near-surface dopant distribution for plasma-based implants. This study specifically focuses on measuring near-surface profile shapes as well as total implant doses for ultra-shallow B implants in Si especially those made with high peak B concentrations. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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