Spectroscopic Studies of Band Edge Electronic States in Elemental High-k Oxide Dielectrics on Si and Ge Substrates.

Autor: Lucovsky, G., Seo, H., Fleming, L. B., Ulrich, M. D., Lüning, J.
Předmět:
Zdroj: AIP Conference Proceedings; 9/26/2007, Vol. 931 Issue 1, p315-319, 5p, 4 Graphs
Abstrakt: This paper uses X-ray absorption spectroscopy, and vacuum ultra-violet spectroscopic ellipsometry to distinguish between i) non-crystallinity, and ii) nano-crystallinity in transition metal (TM) elemental oxides. Near edge X-ray absorption spectroscopy is used to distinguish between two different scales of nano-crystalline order. The observation of band edge Jahn-Teller splittings in anti-bonding states with TM p-character correlate with the observation of nano-crystalline-order that can be detected by X-ray diffraction, and establish a length scale for order, λs>3 to 4 nm, The suppression of J-T splittings, and a spectral broadening is associated with reduced nano-crystalline order that can be detected by atomic-scale imaging and/or extended X-ray absorption spectroscopy for λs<∼2.5 nm. These different states of nano-crystalline grain-size order for addressed in elemental transition metal oxides on both Si and Ge substrates. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index