| Autor: |
Goncharova, Lyudmila V., Dalponte, Mateus, Celik, Ozgur, Garfunkel, Eric, Gustafsson, Torgny, Lysaght, Pat S., Bersuker, Gennadi I. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 9/26/2007, Vol. 931 Issue 1, p324-328, 5p, 1 Diagram, 3 Graphs |
| Abstrakt: |
When metal electrodes are deposited on a high-κ metal-oxide/SiO2/Si stack, chemical interactions may occur both at the metal/high-κ and the high-κ/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO2/SiO2/Si stacks causes reduction of the SiO2 interfacial layer and (to a lesser extent) the HfO2 layer. Silicon atoms initially present in the interfacial SiO2 layer incorporate into the bottom of the high-κ layer. Some evidence for titanium-silicon interdiffusion through the high-κ film in the presence of a titanium gate in crystalline HfO2 films is also reported. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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