| Autor: |
Eklund, P., Beckers, M., Frodelius, J., Högberg, H., Hultman, L. |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Sep2007, Vol. 25 Issue 5, p1381-1388, 8p, 1 Black and White Photograph, 7 Graphs |
| Abstrakt: |
Ti3SiC2 thin films were synthesized by magnetron sputtering from Ti3SiC2 and Ti targets. Sputtering from a Ti3SiC2 target alone resulted in films with a C content of ∼50 at. % or more, due to gas-phase scattering processes and differences in angular and energy distributions between species ejected from the target. Addition of Ti to the deposition flux from a Ti3SiC2 target is shown to bind the excess C in TiCx intergrown with Ti3SiC2 and Ti4SiC3. Additionally, a substoichiometric TiCx buffer layer is shown to serve as a C sink and enable the growth of Ti3SiC2. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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