| Autor: |
Hallam, T., Butcher, M. J., Goh, K. E. J., Ruess, F. J., Simmons, M. Y. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/2007, Vol. 102 Issue 3, p034308, 5p, 1 Chart, 3 Graphs |
| Abstrakt: |
We use scanning tunneling microscopy to investigate the atomic-scale process of hydrogen desorption from H:Si(001) with a 25 keV scanning electron microscope (SEM) electron beam and characterize the rate of desorption, contaminant deposition, and desorption straggle. We then demonstrate the effectiveness of a SEM to pattern a hydrogen resist for device fabrication by showing that it is compatible with phosphine (PH3) dosing to form large (4×4 μm2) buried planar conducting regions in silicon. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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