| Autor: |
Wang, Hung-Tsung, Jeng, Ming-Jer |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/1999, Vol. 86 Issue 11, p6261, 3p, 1 Chart, 2 Graphs |
| Abstrakt: |
Deals with a study which proposed a method for surface passivation using both the phosphorus sulfide/ammonia sulfide solution and hydrogen fluoride (HF) solution for the barrier height enhancement of silver/n-Indium phosphate Schottky diodes. Fabrication of the Schottky diodes on a silicon-doped n-gallium arsenide substrate; Result of the surface composition analysis; Conclusions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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