Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs.

Autor:	Betko, J., Morvic, M.
Předmět:	HALL effect ELECTRIC conductivity MAGNETORESISTANCE GALLIUM arsenide MOLECULAR beam epitaxy
Zdroj:	Journal of Applied Physics; 12/1/1999, Vol. 86 Issue 11, p6243, 6p, 1 Chart, 8 Graphs
Abstrakt:	Focuses on a study which analyzed the temperature dependent conductivity and Hall effect, as well as the transverse and longitudinal magnetoresistances in molecular-beam epitaxial gallium arsenide (GaAs) layers. Experimental details of the study; Experimental results; Conclusion.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu