Diode End-Pumped Passively Q-Switched Nd3+:GdVO4Self-Raman Laser at 1176 nm.

Autor: Wang Bao, Peng Ji, Miao Jie, Li Yi, Hao Er, Zhang Zhe, Gao Lan, Lan and, Tan Hui
Předmět:
Zdroj: Chinese Physics Letters; Jan2007, Vol. 24 Issue 1, p112-114, 3p
Abstrakt: A compact diode-end-pumped passively Q-switched Nd3+:GdVO4/Cr4+:YAG self-Raman laser at 1176 nm is demonstrated. When the T0= 80Cr4+:YAG saturable absorber is inserted into the cavity, the maximum Raman laser output reaches 175 mW with 3.8 W incident pump power. The optical conversion from incident to the Raman laser is 4.6 and the slope efficiency is 6.5. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5 ?J, 1.8 ns, and 38.5 kHz, respectively. There is strong blue emission (about 350-400 nm) can be observed in the Nd3+:GdVO4crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the Nd3+ions. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index