| Autor: |
Yanning Sun, Kiewra, E. W., Koester, S. J., Ruiz, N., Callegari, A., Fogel, K. E., Sadana, D. K., Fompeyrine, J., Webb, D. J., Locquet, J.-P., Sousa, M., Germann, R., Shiu, K. T., Forrest, S. R. |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Jun2007, Vol. 28 Issue 6, p473-475, 3p, 1 Diagram, 7 Graphs |
| Abstrakt: |
The operation of long- and short-channel enhancement-mode In0.7Ga0.3As-channel MOSFETs with high-κ gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 µm, the long-channel devices have Vt +0.25 V, a subthreshold slope of 150 mV/dec, an equivalent oxide thickness of 4.4 +/- 0.3 nm, and a peak effective mobility of 1100 cm²/V · s. For a gate length of 260 nm, the short-channel devices have Vt = +0.5 V and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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