| Autor: |
Cho, Hyun-Jin, Greene, Brian J., Hoyt, Judy L., Plummer, James D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/15/2007, Vol. 101 Issue 10, p104905, 5p, 3 Black and White Photographs, 3 Diagrams, 1 Graph |
| Abstrakt: |
We have investigated the mechanism of crystallite nucleation and growth in prepatterned nanoscale α-Si pillars using transmission electron microscopy. The number of α-Si pillars that crystallize during annealing depends upon the pillar diameter and the density of nucleation sites at the α-Si/oxide interface, in the as-deposited film. These nucleation sites are presumed to be clusters of atoms exhibiting short-range order that are formed during the initial deposition of α-Si. Their density depends upon the specific deposition conditions. The density of nucleation sites is extracted from the measured pillar crystallization statistics using a Poisson distribution model. It is also observed that the orientation dependence of the crystal growth rate enhances the formation of a single grain inside each pillar. Significant reduction of defect density is achieved with high temperature annealing of sub-100-nm pillars where the surface to bulk ratio is high. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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