| Autor: |
Alles, Michael L., Pasternak, Robert, Xiong Lu, Tolk, Norman H., Schrimpf, Ronald D., Fleetwood, Daniel M., Dolan, Robert P., Standley, Robert W. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Semiconductor Manufacturing; May2007, Vol. 20 Issue 2, p107-113, 7p, 10 Graphs |
| Abstrakt: |
We report experimental results from noninvasive second harmonic generation (SHG) measurements applied to characterize separation by implantation of oxygen (SIMOX) and bonded thin film silicon-on-insulator (SOI) wafers. Results demonstrate that the SHG response of the SOI structure can provide an indication of the quality of the buried oxide interfaces, including roughness, charge states, and detection of the presence of metallic contamination. The potential application of SHG as a noncontact metrology tool for process control is described. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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