| Autor: |
Peres, M. L., Chitta, V. A., Gusev, G. M., Oliveira Jr., Nei F., Rappl, P. H. O., Ueta, A. Y., Abramof, E. |
| Předmět: |
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| Zdroj: |
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics; 4/10/2007 Part 1 of 2, Vol. 21 Issue 8/9, p1519-1523, 5p, 3 Graphs |
| Abstrakt: |
We investigated the magnetotransport properties of n- and p-type films of Pb1-xEuxTe grown by molecular beam epitaxy, with Eu concentrations close to the Metal-Insulator transition. The n-type sample shows a negative magnetoresistance which magnitude increases continually as the temperature is lowered. On the other hand, for the p-type sample, a negative magnetoresistance can be observed only for temperatures below 7 K. Comparing the magnetoresistance of both samples we show that the scattering mechanism should have a different origin. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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