| Autor: |
Sugawara, Yuta, Uraoka, Yukihiru, Yano, Hiroshi, Hatayama, Tomoaki, Furuki, Takashi, Mimura, Akio |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; May2007, Vol. 28 Issue 5, p395-397, 3p, 5 Graphs |
| Abstrakt: |
We report a new laser crystallization method employing double-layered amorphous-Si (a-Si) thin films for solid green laser annealing (GLA) crystallization that is called GLA double-layered x'tallization (GLADLAX). Crystallization of the upper and lower a-Si layers of the double-layered substrate at a single laser scanning was achieved, with the upper a-Si becoming poly-Si with very large crystal grains and the lower a-Si layer becoming microcrystalline Si. Thin-film transistors using the upper layer of poly-Si that is crystallized by the method as their active channels had excellent switching performance, with their mobility exceeding 350 cm²/V · s, demonstrating promising applicability of GLADLAX to thin-film electronics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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