| Autor: |
Personnic, S., Bourdelle, K. K., Letertre, F., Tauzin, A., Laugier, F., Fortunier, R., Klocker, H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/15/2007, Vol. 101 Issue 8, p083529, 4p, 5 Graphs |
| Abstrakt: |
The effect of hydrogen implantation on the transport of impurities in silicon is studied. We use secondary ion mass spectrometry measurements to investigate the depth redistribution of oxygen, carbon, and fluorine during low temperature, ≤450 °C, isothermal anneals. Their fast migration toward the projected range region of H implants points to the existence of a strong interaction of the impurities with H-induced defects. Significantly enhanced, as compared to the literature values, diffusivities of the investigated impurities were obtained. The results reveal that hydrogen implantation can be advantageously used for the impurity profile engineering and gettering studies in silicon in the low temperatures annealing regime. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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