| Autor: |
Burbaev, Timur M., Kurbatov, Vadim A., Lichtenberger, Herbert, Rzaev, Murvetali M., Sibeldin, Nikolai N., Schäffler, Friedrich, Tsvetkov, Vitalii A. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2007, Vol. 893 Issue 1, p441-442, 2p, 2 Graphs |
| Abstrakt: |
In thin SiGe layers of Si/Si1-xGex/Si heterostructures electron-hole liquid (EHL) photoluminescence is found out. The threshold density of excitation necessary for the EHL formation is considerably lower and the threshold temperature is noticeably higher than in bulk alloy of the same composition owing to accumulation of the photoexcited charge carriers in the potential well of the SiGe layer. The analysis of the form of luminescence lines in the SiGe layer allows us to estimate the EHL density (n0 = 2.6·1018 cm-3) and the binding energy with respect to gas of excitons (φ = 5.2 meV). At a high level of excitation and temperature exceeding 30 K the line of radiation of electron-hole plasma (EHP) in SiGe layer is observed in spectra. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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