| Autor: |
Dmitruk, Nicolas L., Kutovyi, Sergij Yu., Dmitruk, Igor M., Berezovska, Natalia I., Simkiene, Irene, Sabataityte, Julija |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2007, Vol. 893 Issue 1, p27-28, 2p, 1 Chart, 4 Graphs |
| Abstrakt: |
Morphology and optical properties of the porous GaAs layers formed on a single crystal GaAs were investigated by using SEM, AFM, monochromatic multi-angle-of-incidence (MAI) ellipsometry, and photoluminescence and Raman scattering spectroscopies. The pore layer was composed of the two-layer structure: GaAs pores and its oxide above it. The formation of the two-layer structure caused the alternation of optical constants and the enhancement of Raman scattering and above-band-edge photoluminescence, which could be related to quantum confinement of excitons. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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