| Autor: |
Ivanova, Galina N., Nedeoglo, Dmitrii D., Nedeoglo, Natalia D., Rusu, Emil V., Sirkeli, Vadim P., Stratan, Gheorghe I., Ursaki, Veacheslav V. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2007, Vol. 893 Issue 1, p279-280, 2p, 3 Graphs |
| Abstrakt: |
Photoluminescence of N-doped ZnSe crystals is studied at temperatures between 10 and 300 K. Doping with N leads to the formation of simple N-based donor and acceptor defects, as well as associative N-based acceptors. The nature and the structure of N-based luminescence centres and the mechanisms of radiative recombination are discussed. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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