| Autor: |
Chen, Peng-Shiu, Hseieh, T.E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/15/1999, Vol. 86 Issue 10, p5399, 8p, 6 Black and White Photographs, 1 Chart, 5 Graphs |
| Abstrakt: |
Studies the morphology and annealing behaviors of extended defects in silicon subjected to various germanium preamorphization and BF... implantation conditions. Purpose of preamorphization; Procedure of annealing treatment; Effects of annealing on defect morphology; Effects of plasma surface nitridation on EOR defect removal. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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