| Autor: |
Kamiński, P., Kozłowski, R., Kozubal, M., Żelazko, J., Miczuga, M., Pawłowski, M. |
| Předmět: |
|
| Zdroj: |
Semiconductors; Apr2007, Vol. 41 Issue 4, p414-420, 7p, 1 Diagram, 2 Charts, 8 Graphs |
| Abstrakt: |
The potentialities of photoinduced transient spectroscopy in terms of investigation of defect centers in wide-band-gap semiconductors are presented. An experimental system dedicated to measurements of the photocurrent transients at temperatures 20–800 K is described and a new approach to extraction of trap parameters from the photocurrent relaxation waveforms recorded in a selected temperature range is presented. The approach is based on the two-dimensional analysis of the waveforms as a function of time and temperature using the correlation procedure. As a result, three-dimensional images showing the temperature changes of the emission rate for detected defect centers are produced and a neural network method is applied to determine the parameters of defect centers. The new approach is exemplified by studies of defect centers in high-resistivity GaN: Mg and semi-insulating 6 H-SiC: V. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
