| Autor: |
Heung Jin Joo, Seung Kuk Kang, Jung Hoon Park, Hwi San Kim, Jai-Hyun Kim, Ju Young Jung, Do Yeon Choi, Eun Sun Lee, Young Min Kang, Sung Yung Lee, Hong Sik Jeong, Kinam Kim |
| Předmět: |
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| Zdroj: |
Integrated Ferroelectrics; 2007, Vol. 89 Issue 1, p106-115, 10p, 3 Diagrams, 1 Chart, 10 Graphs |
| Abstrakt: |
We developed a 1.6 V FRAM embedded device by successfully implementing a 100 nm MOCVD-PZT capacitor with a SrRuO3 electrode and a novel additional top electrode (ATE). ATE was used for preventing hydrogen-reduction damage or metal substance damage, arising from direct application of Al or W to top electrode. In spite of excellent reliability and wide sensing window of the memory, we found that there was a problem of lift-off of the ATE layer after full integration, leading to bit failure of the product. In order to eliminate the lift-off, we developed a new ATE scheme not only by using a compressive capping- oxide layer but by improving conformal deposition of ATE. The failed bits that appear as a tail of charge distribution were cleared even under a reliability test, a bake for 100 hours at 150°C. As a result, yield loss of the device was greatly reduced. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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